053-4240 rev e 6-2015 product benefits ? low losses ? low noise switching ? cooler operation ? higher reliability systems ? increased system power density product features ? ultrafast recovery times ? soft recovery characteristics ? popular to-220 package ? low forward voltage ? low leakage current ? avalanche energy rated product applications ? anti-parallel diode -switchmode power supply -inverters ? free wheeling diode -motor controllers -converters -inverters ? snubber diode ? pfc ultrafast soft recovery rectifier diode 1000v 30a apt30dq100k APT30DQ100KG * *g denotes rohs compliant, pb free terminal finish. maximum ratings all ratings: t c = 25c unless otherwise speciied. 1 - cathode 2 - anode back of case - cathode 1 2 maximum ratings all ratings: t c = 25c unless otherwise speciied. static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 2.5 3.0 3.06 1.92 100 500 26 characteristic / test conditions forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 30a i f = 60a i f = 30a, t j = 125c v r = 1000v v r = 1000v, t j = 125c characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 102c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh) operating and storagetemperature range lead temperature for 10 sec. symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg t l unit volts amps mj c apt30dq100k(g) 1000 3043 150 20 -55 to 175 300 microsemi website - http://www.microsemi.com 1 2 (k) downloaded from: http:///
apt30dq100k(g) dynamic characteristics 053-4240 rev e 6-2015 dynamic characteristics min typ max - 24 - 295 - 440 - 4 - - 330 - 1550 - 8 - - 150 - 2250 - 25 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 667v, t c = 25 c i f = 30a, di f /dt = -200a/ s v r = 667v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 667v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c thermal and mechanical characteristics characteristic / test conditions junction-to-case thermal resistance package weight maximum mounting torque symbol r jc w t torque min typ max .80 0.07 9.9 10 1.1 unit c/w oz g lb?in n?m microsemi reserves the right to change, without notice, the speciications and information contained herein. z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.900.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note : d = 0.9 downloaded from: http:///
053-4240 rev e 6-2015 apt30dq100k(g) typical performance curves t j = 125 c v r = 667v 15a 30a 60a t rr q rr q rr t rr i rrm 500400 300 200 100 0 3530 25 20 15 10 50 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 5045 40 35 30 25 20 15 10 50 1.21.0 0.8 0.6 0.4 0.2 0.0 160140 120 100 8060 40 20 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage 100 9080 70 60 50 40 30 20 10 0 40003500 3000 2500 2000 1500 1000 500 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of change 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 667v 60a 15a 30a t j = 125 c v r = 667v 60a 30a 15a downloaded from: http:///
apt30dq100k(g) 053-4240 rev e 2-2015 apt10035lll to-220 (k) package outline e3 100% sn cathode anode cathode dimensions in millimeters and [inches] 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /d t adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform figure 10. diode reverse recovery waveform deinition 5 1 2 3 4 i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve deined by i rrm and t rr. figure 9. diode test circuit downloaded from: http:///
053-4240 rev e 6-2015 apt30dq100k(g) disclaimer: the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply. this document and the information cont ained herein may not be modiied, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in wri ting signed by an oficer of microsemi.microsemi reserves the right to change the coniguration, functionality and performance of its produc ts at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to itness for a particular purp ose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance speciications believed to be reliable but are not veriied and customer or user must conduct and complete all performance and other testing of this product as well as any user or customer's inal application. user or customer shall not rely on any data and performance speciications or parameters provided by microsem i. it is the customers and users re - sponsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi speciically disclaims any liability of any kind including for consequential, incidental and punitive damages as well as lost proit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/terms-a-conditions. downloaded from: http:///
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